v rrm = 20 v - 100 v i f = 120 a features ? high surge capability twin tower package ? types up to 100 v v rr m parameter symbol MBR12045CT (r) mbr12060ct (r) unit repetitive peak reverse v 45 60 v silicon power schottk y diode conditions 100 MBR12045CT thru mbr120100ctr mbr120100ct (r ) 80 mbr12080ct (r) maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) voltage v rrm 45 60 v rms reverse voltage v rms 32 42 v dc blocking voltage v dc 45 60 v continuous forward current i f 120 120 a operating temperature t j -40 to 175 -40 to 175 c storage temperature t stg -40 to 175 -40 to 175 c parameter symbol MBR12045CT (r) mbr12060ct (r) unit diode forward voltage 0.65 0.75 33 200 200 thermal characteristics thermal resistance, junction - case r thjc 0.8 0.8 c/w -40 to 175 -40 to 175 t c = 25 c, t p = 8.3 m s 100 70 100 80 -40 to 175 mbr120100ct (r ) 33 mbr12080ct (r) 0.8 v r = 20 v, t j = 125 c 0.8 0.84 0.84 200 ma v v r = 20 v, t j = 25 c i f = 60 a, t j = 25 c t c 140 c conditions 80 56 800 800 -40 to 175 120 120 800 200 a 800 electrical characteristics, at tj = 25 c, unless otherwise specified surge non-repetitive forward current, half sine wave i f,sm reverse current i r v f www.genesicsemi.com 1
MBR12045CT thru mbr120100ctr www.genesicsemi.com 2
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